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| Datasheet File OCR Text: |
| SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 BBY31 2 1 PARTMARKING DETAIL BBY31 - S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL P tot T j:T stg VALUE 330 -55 to +150 UNIT mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Reverse current SYMBOL V BR MIN. 28.0 TYP. MAX. UNIT V CONDITIONS. I R = 10A V R = 28V V R = 28V, T amb = 85C IR 10 1.0 nA A TUNING CHARACTERISTICS (at Tamb = 25C). PARAMETER Diode Capacitance SYMBOL Cd 1.8 Capacitance Ratio Series Resistance Cd / Cd rd 5.0 1.2 MIN. TYP. 17.5 11.5 2.8 MAX. UNIT pF pF pF CONDITIONS. V R = 1V, f=1MHz V R = 3V, f=1MHz V R = 25V, f=1MHz V R = 3V/25V, f=1MHz f=470MHz at the value of V R at which C d=9pF Spice parameter data is available upon request for this device |
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